EC4H09C Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications

Ordering number : ENA1267
EC4H09C
SANYO Semiconductors
DATA SHEET
EC4H09C
NPN Epitaxial Planar Silicon Transistor
UHF to X Band Low-Noise Amplifier
and OSC Applications
Features
• _{High cut-off frequency : fT=26GHz typ (VCE=3V).}
• Low operating voltage.
• _{High gain : ⏐S21e⏐}²_{=16.5dB typ (f=2GHz).}
• _{Halogen free compliance (UL94 HB).}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
10
V
3.5
V
2.5
V
40 mA
120 mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Marking : M
ICBO
IEBO
hFE
fT
Cre
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=1V, IC=5mA
VCE=3V, IC=20mA
VCB=1V, f=1MHz
1 μA
1 μA
70
150
20
26
GHz
0.12
pF
Continued on next page.
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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80608AB TI IM TC-00001513 No. A1267-1/3