EC3A04B_08 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier,Impedance Converter Applications

Ordering number : ENA0509A
EC3A04B
SANYO Semiconductors
DATA SHEET
EC3A04B
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applicatins
• Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
• Small IGSS.
• _{Small Ciss.}
• _{Ultraminiature package facilitates miniaturization in end products.}
• _{Halogen free compliance (UL94HB).}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : KC
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IG=--10μA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1μA
Ratings
Unit
30
V
--30
V
10 mA
10 mA
100 mW
150
°C
--55 to +150
°C
min
--30
--0.18
Ratings
Unit
typ
max
V
--1.0 nA
--0.65
--2.2
V
Continued on next page.
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41608 TI IM TC-00001316 / 70407GB TI IM TC-00000742 No. A0509-1/4