EC2C03C Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO

Ordering number : ENN8237
EC2C03C
EC2C03C
Diffused Junction Type Silicon Diode
Variable Capacitance Diode for
UHF Band VCO
Applications
• 0.8 to 1.9GHz band VCO applications.
Features
• _{Low series resistance. rs=0.55Ω typ.}
• _{Ultraminiature (1008size) and (0.6mm) leadless package.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Breakdown Voltage
Reverse Current
Interterminal Capacitance
Capacitance Ratio
Series Resistance
Marking : VA
* 1MHz signal : 20mVrms
.
Symbol
V(BR)R
IR
C1.0V
C3.0V
CR
rs
Conditions
IR=10µA
VR=10V
VR=1.0V, f=1MHz *
VR=3.0V, f=1MHz
C1.0V / C3.0V
VR=1.0V, f=470MHz
Ratings
Unit
15
V
125
°C
--55 to +125
°C
Ratings
Unit
min
typ
max
15
V
200 nA
6.5
8.2 pF
4.0
5.2 pF
1.6
0.55
0.75
Ω
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31505VC TS IM TB-00001150 No.8237-1/3