DZB62 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 1.0W Zener Diodes

Ordering number :EN653F
Features
· Plastic molded structure.
· Voltage regulator use.
· Power dissipation:P=1.0W.
· Zener voltage:VZ=6.2 to 30V
DZB6.2 to DZB30
Sillicon Diffused Junction Type
1.0W Zener Diodes
Package Dimensions
unit:mm
1083
[DZB6.2 to DZB30]
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Ratings
Unit
1.0 W
150 ˚C
–40 to +150 ˚C
Type No.
Zener Characteristics
Forward Voltage Drop
Reverse Current
DZB6.2U
6.8C
7.5C
8.2C
9.1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
Zener Voltage
VZ
[V]
Dynamic
Resistance
Measured
Measured
Measured
Current
VF
Current
IR
Voltage
[Ω]
IZ
[V]
[A]
[µA]
[V]
typ
min
max
max
[mA]
max
max
6.2
5.60
6.80
60
–10
2
0.2
–10
–2.0
6.8
6.45
7.14
60
–10
2
0.2
–10
–3.0
7.5
7.13
7.81
30
–10
2
0.2
–10
–4.5
8.2
7.79
8.61
30
–10
2
0.2
–10
–4.9
9.1
8.65
9.55
30
–10
2
0.2
–10
–5.5
10
9.50
10.50
30
–10
2
0.2
–10
–6.0
11
10.50
11.50
30
–10
2
0.2
–10
–7.0
12
11.40
12.60
30
–10
2
0.2
–10
–8.0
13
12.40
13.60
30
–10
2
0.2
–10
–9.0
15
14.30
15.80
30
–10
2
0.2
–10
–10.0
16
15.20
16.80
30
–10
2
0.2
–10
–11.0
18
17.10
18.90
30
–10
2
0.2
–10
–13.0
20
19.00
21.00
30
–10
2
0.2
–10
–14.0
22
20.90
23.10
30
–10
2
0.2
–10
–16.0
24
22.80
25.20
30
–10
2
0.2
–10
–17.0
27
25.70
28.30
30
–10
2
0.2
–10
–19.0
30
28.50
31.50
30
–10
2
0.2
–10
–21.0
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/13196GI/2089TA/1199MO/9205KI, TS No.653-1/2