DWA010 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode

Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
• Ideally suited for use in hybrid ICs because of ultrasmall package.
• High switching speed.
• Small interterminal capacitance.
Absolute Maximum Ratings at Ta=25°C
Peak Reverse Voltage
VRM
Reverse Voltage
VR
Peak Forward Current
IFM
IFM
*
Average Rectified Current
Io
Io
*
Surge Forward Current
IFSM
1µ s
IFSM *
Allowable Power Dissipation P
Junction Temperature
Tj
Storage Temperature
Tstg
* : Total value
unit
85 V
80 V
300 mA
450 mA
100 mA
150 mA
4A
6A
200 mW
125 °C
–55 to +125 °C
Electrical Characteristics at Ta=25°C
min typ max unit
Forward Voltage
VF1
IF=1mA
0.61
V
VF2
IF=10mA
0.74
V
VF3
IF=100mA
1.20
V
Reverse Current
IR1
VR=30V
0.1 µA
IR2
VR=80V
0.5 µA
Interterminal Capacitance
C
VR=0V, f=1MHz
Reverse Recovery Time
trr
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
2.0 pF
4.0
ns
Marking : W8
Reverse Recovery Time Test Circuit
Package Dimensions 1164A
(unit : mm)
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
82597GI/41096GI/93094MO/2279TA, TS No.2171-1/2