DTA6-N Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 6A Bidirectional Thyristor

Ordering number : EN1874C
Silicon Planar Type
DTA6-N
6A Bidirectional Thyristor
Features
• Peak OFF-state voltage : 200 to 600V
• RMS ON-state current : 6A
• TO-220 package.
Absolute Maximum Ratings at Ta=25°C
DTA6C-N DTA6E-N DT6AG-N unit
Repetitive Peak
V_DRM
200
400
600 V
OFF-StateVoltage
RMS ON-State Current
I_T(RMS) Tc=104°C, single-phase
→
→
6A
full-wave
Surge ON-State Current
Amperes Squared-Seconds
I_TSM
∫ i²T·dt
Peak 1 cycle, 50Hz
1ms≤t≤10ms
→
→
→
→
60 A
18 A²s
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Junction Temperature
P_GM
P_G(AV)
I_GM
V_GM
Tj
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
→
→
5W
→
→
0.5 W
→
→
±2 A
→
→
±10 V
→
→
125 °C
Strage Temperature
Tstg
→ –40 to +125 °C
Weght
→
→
1.8 g
Electrical Characteristics at Ta=25°C
Repetitive Peak
OFF-State Current
I_DRM
Peak ON-State Voltage
Critical Rate of Rise of
V_TM
dv/dt
OFF-State Voltage
Holding Current
Gate Trigger Current (I)
(II)
(III)
(IV)
Gate Trigger Voltage (I)
(II)
(III)
(IV)
Gate Nontrigger Voltage
Thermal Resistance
I_H
I_GT
I_GT
I_GT
I_GT
V_GT
V_GT
V_GT
V_GT
V_GD
Rth(j-c)
* : The gate trigger mode is shown below.
Trigger mode
I
II
III
IV
T2 T1 G
+–+
+––
–++
–+–
Tj=125°C, V_D=V_DRM
min typ max
2
I_TM=9A
1.5
Tj=125°C, V_D=200V (C),
10
400V (E to G)
R_L=100Ω
50
V_D=12V, R_L=20Ω
30
V_D=12V, R_L=20Ω
30
V_D=12V, R_L=20Ω
50
V_D=12V, R_L=20Ω
30
V_D=12V, R_L=20Ω
2
V_D=12V, R_L=20Ω
2
V_D=12V, R_L=20Ω
2
V_D=12V, R_L=20Ω
2
Tc=125°C, V_D=Rated voltage
0.2
Between junction and case, AC
2
Package Dimensions 1155A
(unit : mm)
unit
mA
V
V/µ s
mA
mA
mA
mA
mA
V
V
V
V
V
°C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3109MO, TS No.1874-1/3