DTA1 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 1.0A Bidirectional Thyristor

Ordering number : EN2283B
Silicon Planar Type
DTA1
1.0A Bidirectional Thyristor
Features
• Low AC power control use.
• Peak OFF-state voltage : 200 to 400V
• RMS ON-state current : 1A
• TO-92 package.
Absolute Maximum Ratings at Ta=25°C
DTA1C DTA1E unit
Repetitive Peak
V_DRM
200
400 V
OFF-StateVoltage
RMS ON-State Current
I_T(RMS) Tc=74°C, single-phase
→
1.0 A
full-wave
Surge ON-State Current
Amperes Squared-Seconds
I_TSM
∫ i²T·dt
Peak 1 cycle, 50Hz
1ms≤t≤10ms
→
8A
→
0.32 A²s
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Junction Temperature
P_GM
P_G(AV)
I_GM
V_GM
Tj
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
→
1W
→
0.1 W
→
±0.5 A
→
±6 V
→
125 °C
Strage Temperature
Tstg
–40 to +125 °C
Weght
→
0.2 g
Electrical Characteristics at Ta=25°C
Repetitive Peak
OFF-State Current
I_DRM
Peak ON-State Voltage
Holding Current
Gate Trigger Current* (I)
(II)
(III)
(IV)
Gate Trigger Voltage* (I)
(II)
(III)
(IV)
Gate Nontrigger Voltage
Thermal Resistance
V_TM
I_H
I_GT
I_GT
I_GT
I_GT
V_GT
V_GT
V_GT
V_GT
V_GD
Rth(j-c)
* : The gate trigger mode is shown below.
Trigger mode T2 T1 G
I
+–+
II
+––
III
–++
IV
–+–
Tj=25°C, V_D=V_DRM
min typ max
10
I_TM=1.5A
1.5
V_D=12V, gate open
10
V_D=12V, R_L=20Ω
5
V_D=12V, R_L=20Ω
5
V_D=12V, R_L=20Ω
10
V_D=12V, R_L=20Ω
5
V_D=12V, R_L=20Ω
2
V_D=12V, R_L=20Ω
2
V_D=12V, R_L=20Ω
2
–
V_D=12V, R_L=20Ω
2
Tc=125°C, V_D=V_DRM
0.2
–
Between junction and case, AC
40
Package Dimensions 1192B
(unit : mm)
unit
µA
V
mA
mA
mA
mA
mA
V
V
V
V
V
°C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3089MO, TS No.2283-1/3