DSM10G_0609 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 1.0A Power Rectifier

Ordering number : EN2794C
DSM10G
SANYO Semiconductors
DATA SHEET
DSM10G
Diffused Junction Silicon Diode
1.0A Power Rectifier
Features
• _{Facilitates automatic mounting and miniaturization in end products.}
• Peak reverse voltage : VRM=600V.
• Average output current : IO=1.0A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, mounted on an alumina board
Load resistor, mounted on a PCB
50Hz sine wave, non-repetitive, 1 cycle peak value
150
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Symbol
Conditions
min
VF
IF=1A
IR
VR=VRM
θj-l
Junction-Lead
Junction-Ambient Mounted on an alumina board
θj-a
Mounted on a PCB
Ratings
Unit
600
V
1.0
A
0.75
A
25
A
°C
°C
Ratings
typ
max
1.1
10
23
108
157
Unit
V
µA
°C/W
°C/W
°C/W
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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