DLM10_07 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 1.0A Ultrahigh-Speed Rectifier

Ordering number : EN2792B
DLM10
SANYO Semiconductors
DATA SHEET
DLM10 ^{Silicon Diffused Junction Type}
1.0A Ultrahigh-Speed Rectifier
Applications
• _{Switching regulators, high-frequency rectification.}
Features
• _{Fast reverse recovery time and small switching loss.}
• Reverse voltage : VRM=200 to 400V.
• Average rectified current : IO=1.0A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, no fin, Ta=57°C resistive load
(L=8mm, print land 10✕10mm)
50Hz sine wave, 1cycle
DLM10C
200
DLM10E
Unit
400 V
1.0
A
30
A
150
°C
--40 to +150
°C
Electrical Characteristics [DLM10C] at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Symbol
VF
IR
trr
Rth(j-a)
Conditions
IF=1.0A
VRM=200V
IFM=1A, --di/dt=50A/µs
No heat sink, DLM10 only
Ratings
Unit
min
typ
max
0.98
V
10
µA
35
ns
115 °C / W
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91907RL TI IM TC-00000895 / 53098 HA (KT)/92995 GI (KOTO)/5108 TA, TS No.2792-1/3