DL-8032-001 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – INFRARED LASER DIODE

INFRARED LASER DIODE
DL-8032-001
Ver.4 Apr. 1999
Features
• Lasing wavelength : 830 nm (Typ.)
• High output power : 150 mW at 50°C
• Low threshold current : Ith = 50 mA (Typ.)
Applications
• Bar-code scanner
• Laser beam printer
Package
0
ø9.0 - 0.03
ø5.35
ø4.75± 0.15
ø3.0
Tolerance : ± 0.2
(Unit : mm)
Effective window diameter 2.0min.
1
3
2
Top view
1.0± 0.1
LD facet
Absolute Maximum Ratings
Parameter
Symbol
Light Output CW
Po
Reverse
Voltage
Laser
PD
VR
Operating Temperature Topr
Storage Temperature Tstg
(Tc=25°C)
Ratings Unit
150
mW
2
V
30
-10 to +50 °C
-40 to +85 °C
ø1.4max.
3-
ø0.45± 0.1
Pin No.
12 3
ø2.54
Pin Connection
1
3
LD
PD
Electrical and Optical Characteristics
2
(Tc=25°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Threshold Current
Ith
CW
-
50
70
mA
Operating Current
Iop
Po=150mW
-
185
220
mA
Operating Voltage
Vop
Po=150mW
-
1.8
2.2
V
Lasing Wavelength
Lp
Po=150mW 815
830
840
nm
Beam ^{1) Perpendicular Qv}
Divergence _Parallel
Qh
Po=150mW 12
Po=150mW
5
18
25
°
7
11
°
Off Axis ^{Perpendicular dAv}
-
Angle
Parallel
dQh
-
-
-
±3
°
-
-
±3
°
Differential Efficiency dPo/dIop
-
0.7
1.0
-
mW/mA
Monitoring Output Current
Im
Po=150mW 0.15
0.5
2.0
mA
Astigmatism
Ac
Po=150mW
-
10
-
µm
1) Full angle at half maximum
Note : The above product specification are subject to change without notice.
Tottori SANYO Electric Co., Ltd. EIectronic Device Business Headquarters
LED Division
5-318, Tachikawa, Tottori 680-8634 Japan TEL : [phone] FAX : [phone]