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DL-7240-201S Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – INFRARED LASER DIODE
INFRARED LASER DIODE
DL-7240-201S
Ver.2 Oct. 2001
Features
• Wavelength : 785 nm (Typ.)
• Low threshold current : Ith = 30 mA (Typ.)
• High output power : 85mW (Pulse) at 60°C
• D-type shape stem
Applications
Optical disc system (CD-R)
Package
Tolerance : ± 0.2
(Unit : mm)
0
ø5.6-0.025
ø4.4
ø3.55
1.6
Effective window diameter 0.6min.
Top view
1.0±0.1
Absolute Maximum Ratings
(Tc=25°C)
Parameter
Symbol Ratings Unit
CW Po (CW)
80
Light Output
1)
mW
Pulse Po(pulse)
85
Reverse
Voltage
Laser
VR
2
V
Operating Temperature Topr -10 to +60 °C
Storage Temperature Tstg
1) Pulse Width ≤0.5µs, Duty ≤50%
-40 to +85 °C
Electrical and Optical Characteristics
Parameter
Symbol
Threshold Current
Ith
Operating Current
Iop
Operating Voltage
Vop
Lasing Wavelength
Lp
Beam 2) Perpendicular Qv
Divergence Parallel
Qh
Off Axis Perpendicular
Angle
Parallel
Differential Efficiency
Astigmatism
dQv
dQh
dPo/dIop
As
Condition
CW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
Po=70mW
-
-
-
Po=70mW
ø1.4max.
3-
ø0.45±0.1
Pin No. 1 2 3
ø2.0
Pin Connection
1
3
LD
2
(Tc=25°C)
Min.
Typ.
Max.
Unit
-
30
50
mA
-
100
140
mA
-
2.0
2.5
V
780
785
800
nm
15
17
20
°
6
8
10
°
-
-
±3
°
-
-
±2
°
0.6
1.0
1.4 mW/mA
-
-
10
µm
2) Full angle at half maximum
Note : The above product specification are subject to change without notice.
Tottori SANYO Electric Co., Ltd. EIectronic Device Business Headquarters
LED Division
5-318, Tachikawa, Tottori 680-8634 Japan TEL : +81-857-21-2137 FAX : +81-857-21-2161