DL-4038-025 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High Power AlGaInP Laser Diode

Ordering number : EN5902
DL-4038-025
Red Laser Diode
DL-4038-025
High Power AlGaInP Laser Diode
Overview
DL-4038-025 is a high power 635 nm (Typ.) AlGalnP laser diode.The
lasing wavelength is the same as He-Ne gas lasers. DL-4038-025 is
suitable for applications such as laser printers, line markers and other
optical information systems.
Features
• Short wavelength
• High output power
• Low threshold current
• Low operating voltage
: 635 nm (Typ.)
: 20mW CW
: Ith = 45 mA (Typ.)
: Vop = 2.3 V (Typ.)
Package Dimensions
0
ø9.0 – 0.03
Tolerance : ± 0.2
Unit
: mm
ø5.35
ø4.75±0.15
ø2.1
Effective window diameter 1.0min.
1
3
2
Top view
1.0±0.1
LD facet
Absolute Maximum Ratings at Tc=25°C
Parameter
Symbol Ratings
Unit
Light Output
CW
Po
20
mW
Reverse Voltage ^Laser VR
2
V
PIN
30
Operating Temperature Topr ---10 to +40
°C
Storage Temperature
Tstg
---40 to +85
°C
ø1.4max.
3– ø0.45±0.1
Pin No. _{1 2 3 ø2.54}
9.0mm ø stem(Red)
Electrical Connection
1
3
LD
PD
Electrical and Optical Characteristics at Tc=25°C
2
– power supply system
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam 1) Perpendicular
Divergence Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
Symbol
Ith
Iop
Vop
λp
θ⊥
θ //
∆θ ⊥
∆θ //
dPo/dIop
Im
As
Condition Min. Typ. Max. Unit
CW
---
45
70
mA
Po=20mW
---
80
110
mA
Po=20mW
---
2.3
2.5
V
Po=20mW
---
635
645
nm
Po=20mW
20
25
35
deg.
Po=20mW
6
7
10
deg.
---
---
---
±3
deg.
---
---
---
±3
deg.
---
---
0.6
--- mW/mA
Po=20mW
---
0.03
---
mA
Po=20mW
---
10
---
µm
1) Full angle at half maximum Note : The above product specification are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI, (IM) No.5902 1/3