DL-3150-106 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Infrared Laser Diode (Frame Type)

Ordering number : ENN7563
Features
• Wavelength : 790 nm (Typ.)
• Frame type
• Compact lightweight thin package
• Straight leads
DL-3150-106
Infrared Laser Diode
DL-3150-106
Infrared Laser Diode (Frame Type)
Package Dimensions
3.2
2-- ^{C 0.5}
1.6
0
8.0 --0.1
4.0±0.12
3.7±0.15 3.0±0.15
4.2
LD facet
Absolute Maximum Ratings at Tc=25°C (as per JISC 7032)
Parameter
Symbol Condition Ratings Unit
Light Output
Po Kink free
5
mW
Reverse Voltage ^Laser VR
-
PIN
-
2
V
30
6.4
2 -- 0.4
3 -- 0.4±0.1
(1.6)
Pin No. _{3 2 1}
Operating Temperature Topr
1) --10 to +60 °C
Frame type(CD)
Storage Temperature Tstg
1) --40 to +85 °C
Soldering Temperature Tsol
2)
260
°C
1) Case temperature
2) Soldering Time≤3s, 1.6 mm from the root of a lead.
Pin Connection
1
LD
3
PD
Electrical and Optical Characteristics 3) 4) at Tc=25°C
Parameter
Symbol
Condition Min. Typ. Max.
Threshold Current
Ith
CW
-
35
50
Operating Current
Iop
Operating Voltage
Vop
Peak Lasing Wavelength 5)
λp
Po=3mW
-
45
60
Po=3mW
1.6
1.8
2.3
Po=3mW
-
790
800
Light Output Power
Beam 6) Perpendicular
Divergence Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Po
θ⊥
θ //
∆θ⊥
∆ θ //
dPo/dIop
-
-
3
-
Po=3mW
25
35
45
Po=3mW
8
10
14
Po=3mW
-
-
±3
Po=3mW
-
-
±2
Po=3mW
0.18
0.35
-
Monitoring Output Current
Im
Po=3mW
0.05
0.20
0.40
3) Initial values 4) All the above values are evaluated with Tottori Sanyo’s measuring apparatus
5) Wafer lot go/no-go decision criteria 6) Full angle at half maximum
Note : The above product specification are subject to change without notice.
2
Unit
mA
mA
V
nm
mW
°
°
°
°
mW/mA
mA
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003 YY IM No.7563 1/3