DFD05T Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 0.5A Power Rectifier

Ordering number:EN2373
DFD05T
Diffused Junction Type Silicon Diode
0.5A Power Rectifier
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R, T).
· Peak reverse voltage:V_RM=100 to 1700V
· Average rectified current I_O=0.5A
Package Dimensions
unit:mm
1174
[DFD05T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
IFSM
Tj
Ta=50˚C
50Hz sine wave, 1cycle
Tstg
DFD05TB DFD05TC DFD05TE DFD05TG Unit
100
200
400
600 V
→
→
→
0.5 A
→
→
→
30 A
→
→
→
150 ˚C
→
→
→ –40 to +150 ˚C
Parameter
Symbol
Conditions
DFD05TJ DFD05TL DFD05TN DFD05TR DFD05TT Unit
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRM
IO
IFSM
Tj
Tstg
Ta=50˚C
50Hz sine wave,
1 cycle
800
1000
1200
1500
→
→
→
→
→
→
→
→
1700 V
0.5 A
20 A
→
→
→
→
125 ˚C
→
→
→
→ –40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage
VF
Reverse Current
IR
Reverse Recovery Time
trr
Reverse Recovery Time Test Circuit
IF=0.5A (B, C, E, G)
IF=0.5A (J, L, N, R, T)
VR:At each VRM
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L, N, R, T)
Ratings
Unit
min typ max
1.2 V
1.5 V
10 µA
0.15 µs
0.3 µs
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)1258AT, TS No.2373-1/2