DCJ010 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Diode

Ordering number : EN5474A
DCJ010
Silicon Epitaxial Planar Type Diode
High-Speed Switching Diode
Features
⋅ Rectifier applications.
⋅ Ideally suited for use in hybrid ICs because of
ultrasmall-sized package.
⋅ Small interterminal capacitance.
Electrical Connection
3
Package Dimensions
unit: mm
1246A
[DCJ010]
1:Anode
2:Cathode
3:Cathode/Anode
1
2
SANYO: MCP
Absolute Maximum Ratings at Ta = 25 ˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V_RM
V_R
I_FM
Io
I_FSM
P
Tj
Tstg
(1 µs)
(Total)
Conditions
Electrical Characteristics Ta = 25 ˚C
Parameter
Symbol
Conditions
min
Forward Voltage
Reverse Current
Interterminal Capacitance
V_F
I_F=10 mA
I_R
V_R=15 V
C
V_R=6 V, f=1 MHz
Ratings
Unit
20
V
20
V
200
mA
100
mA
300
mA
100
mW
125
˚C
–55 to +125
˚C
Ratings
typ
Unit
max
1.0
V
0.1
µA
4.0
pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
63097GI(KOTO) No.5474-1/2