DCG010 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode

Ordering number:EN2791B
DCG010
Silicon Epitaxial Planar Type (Cathode Common)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1187A
[DCG010]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
Surge Current(1µs)
IFSM
Allowable Power Dissipation
P
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Unit rating
Total rating
Unit rating
Total rating
Unit rating
total rating
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF1
IF=1mA
VF2
IF=10mA
VF3
IF=100mA
IR1
VR=30V
IR2
VR=80V
C
VR=0V, f=1MHz
trr
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Marking:W6
Reverse Recovery Time Test Circuit
Electrical Connection
1:Anode1
2:Anode2
3:Cathode1, Cathode2
SANYO:MCP
Ratings
Unit
85 V
80 V
300 mA
450 mA
100 mA
150 mA
4A
6A
100 mW
125 ˚C
–55 to +150 ˚C
Ratings
Unit
min typ max
0.60
V
0.72
V
1.20 V
0.1 µA
0.5 µA
3.0 pF
4.0 ns
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/92995GI (KOTO)/5108TA, TS No.2791-1/2