DCF010 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode

Ordering number:EN2789B
DCF010
Silicon Epitaxial Planar Type (Anode Common)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1186A
[DCF010]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
Surge Current (1µs)
IFSM
Allowable Power Dissipation
P
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Unit rating
Total rating
Unit rationg
Total tating
Unit rating
total rating
Conditions
Parameter
Symbol
Conditions
Forward Voltage
VF1
VF2
VF3
Reverse Current
IR1
IR2
Interterminal Capacitance
C
Reverse Recovery Time
trr
Reverse Recovery Time Test Circuit
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Electrical Connection
1:Cathode1
2:Cathode2
3:Anode1, Anode2
SANYO:MCP
Ratings
Unit
85 V
80 V
300 mA
450 mA
100 mA
150 mA
4A
6A
100 mW
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
0.61
V
0.74
V
1.20 V
0.1 µA
0.5 µA
4.0 pF
4.0 ns
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2