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DCD010 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Diodes
Ordering number : ENN6517
DCD010
Silicon Epitaxial Planar Type
DCD010
Diodes
Features
• Rectifier applications.
• Ideally suited for use in hybrid ICs because of
very small-sized package.
• Small interterminal capacitance.
Electrical Connection
3
1 : Anode
2 : Cathode
3 : Cathode / Anode
1
2
Package Dimensions
unit : mm
1251A
[DCD010]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Anode
2 : Cathode
3 : Cathode / Anode
SANYO : CP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Electrical Characteristics at Ta=25°C
(1µs)
Conditions
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Note) VF and IR are values per element.
C is the value for two elements.
Symbol
VF
IR1
C
Conditions
IF=10mA
VR=15V
VR=6V, f=1MHz
Ratings
Unit
20
V
20
V
200
mA
100
mA
300
mA
200 mW
125
°C
--55 to +125
°C
Ratings
Unit
min
typ
max
1.0
V
0.1
µA
4.0
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42000 GI IM No.6517-1/2