DCC010_9806 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Diode

Ordering number :EN1896B
DCC010
Silicon Epitaxial Planar Type (Series Connection)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1147A
[DCC010]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Unit Rating
Conditions
Average Rectified Current
Surge Current (1µs)
IO
Unit Rating
IFSM Unit Rating
Power Dissipation
P
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
C
trr
· Marking:W7
Reverse Recovery Time Test Circuit
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Electrical Connection
1:Anode
2:Cathode
3:Cathode, Anode
SANYO:CP
Ratings
Unit
85 V
80 V
300 mA
210 mA
100 mA
70 mA
4A
2.8 A
200 mW
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
0.60
V
0.72
V
1.20 V
0.1 µA
0.5 µA
3.0 pF
4.0 ns
(Top view)
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33098HA (KT)/32996GI (KOTO)/D2028TA/N148TA, TS No.1896-1/2