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DCC010-TB-E Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Sillicon Epitaxial Planar Type (Series Connection) | |||
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Ordering number :EN1896B
DCC010
Sillicon Epitaxial Planar Type (Series Connection)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1147A
[DCC010]
Specifications
Absolute Maximum Ratings at Ta = 25ËC
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Unit Rating
Conditions
Average Rectified Current
IO
Unit Rating
Surge Current (1µs)
IFSM Unit Rating
Power Dissipation
P
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25ËC
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
C
trr
· Marking:W7
Reverse Recovery Time Test Circuit
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50â¦, Irr=0.1Irp
Electrical Connection
1:Anode
2:Cathode
3:Cathode, Anode
SANYO:CP
Ratings
Unit
85 V
80 V
300 mA
210 mA
100 mA
70 mA
4A
2.8 A
200 mW
125 ËC
â55 to +125 ËC
Ratings
Unit
min
typ
max
0.60
V
0.72
V
1.20 V
0.1 µA
0.5 µA
3.0 pF
4.0 ns
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/32996GI (KOTO)/D2028TA/N148TA, TS No.1896-1/2
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