DCB015 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Diode

Ordering number:EN1160C
DCB015
Silicon Epitaxial Planar Type (Cathode Common)
High-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Economical because 2pcs, are contained.
Package Dimensions
unit:mm
1169
[DCB015]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM(1µs)
IO
IO
IFM
IFM
Tj
Tstg
Total value
Total value
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Forward Voltage
Symbol
VF
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
Reverse Recovery Time Test Circuit
Conditions
IF=10mA
IF=50mA
IF=100mA
VR=50V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Electrical Connection
C:Cathode
A:Anode
SANYO:CP
Ratings
Unit
75 V
50 V
4A
100 mA
150 mA
300 mA
450 mA
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min
typ
max
0.75
1.0 V
0.85
1.0 V
1.2 V
100 nA
7 pF
5 ns
(Unit Resistance:Ω)
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4039TA/2173KI, TS No.1160-1/2