DCB010_09 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Very High-Speed Switching Diode

Ordering number : EN1895C
DCB010
SANYO Semiconductors
DATA SHEET
DCB010
Silicon Epitaxial Planar Type (Cathode Common)
Very High-Speed Switching Diode
Features
• _{Ideally suited for use in hybrid ICs because of very small-sized package.}
• Fast switching speed.
• Small interterminal capacitance.
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current (1μs)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
* : Total value
Symbol
VRM
VR
IFM
IFM*
IO
IO*
IFSM
IFSM*
P
Tj
Tstg
Conditions
Ratings
Unit
85
V
80
V
300
mA
450
mA
100
mA
150
mA
4
A
6
A
200 mW
125
°C
--55 to +125
°C
Electrical Characteristics at Tc=25°C
Parameter
Forward Voltage
Reverse Current
Marking: W6
Symbol
VF1
VF2
VF3
IR1
IR2
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
Conditions
Ratings
Unit
min
typ
max
0.60
V
0.72
V
1.20
V
0.1 μA
0.5 μA
Continued on next page.
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41509DH MS IM TC-00001938 / N0106 / 12000 GI IM / 2279TA, TS No.1895-1/3