DCB010 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Very High-Speed Switching Diode

Ordering number : EN1895B
DCB010
Silicon Epitaxial Planar Type (Cathode Common)
DCB010
Very High-Speed Switching Diode
Features
• _{Ideally suited for use in hybrid ICs because}
of very small-sized package.
• Fast switching speed.
• Small interterminal capacitance.
Electrical Connection
Cathode
3
1
Anode
2 (Top view)
Anode
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current (1µs)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IFMg
IO
IOg
IFSM
IFSMg
P
Tj
Tstg
g : Total value
Package Dimensions
unit : mm
1169A
[DCB010]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Anode
2 : Anode
3 : Cathode
SANYO : CP
Conditions
Ratings
Unit
85
V
80
V
300
mA
450
mA
100
mA
150
mA
4
A
6
A
200 mW
125
°C
--55 to +125
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12000 GI IM / 2279TA, TS No.1895-1/3