DCA015 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Speed Switching Diode

Ordering number:EN1159C
DCA015
Silicon Epitaxial Planar Type (Anode Common)
High-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Economical because 2pcs, are contained.
Package Dimensions
unit:mm
1117A
[DCA015]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM(1µs)
IO
IO
IFM
IFM
Tj
Tstg
Total value
Total value
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF
IF=10mA
IF=50mA
IF=100mA
IR
VR=50V
C
VR=0V, f=1MHz
trr
IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Reverse Recovery Time Test Circuit
Electrical Connection
A:Anode
C:Cathode
SANYO:CP
Ratings
Unit
75 V
50 V
4A
100 mA
150 mA
300 mA
450 mA
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
0.75
1.0 V
0.85
1.0 V
1.2 V
100 nA
9 pF
8 ns
(Unit Resistance:Ω)
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4039TA/2173KI, TS No.1159-1/2