DCA010_06 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Very High-Speed Switching Diode

Ordering number : EN1892B
DCA010
SANYO Semiconductors
DATA SHEET
DCA010
Silicon Epitaxial Planar Type (Anode Common)
Very High-Speed Switching Diode
Features
• _{Ideally suited for use in hybrid ICs because}
of very small-sized package.
• Fast switching speed.
• Small interterminal capacitance.
Electrical Connection
Anode
3
1
2 (Top view)
Cathode Cathode
Package Dimensions
unit : mm
1117B
[DCA010]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Cathode
2 : Cathode
3 : Anode
SANYO : CP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
Surge Current (1µs)
IFSM
Allowable Power Dissipation
P
Junction Temperature
Tj
Storage Temperature
Tstg
Unit rating
Total rating
Unit rating
Total rating
Unit rating
Total rating
Conditions
Ratings
Unit
85
V
80
V
300
mA
450
mA
100
mA
150
mA
4
A
6
A
200 mW
125
°C
--55 to +125
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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N0106 / 12000 GI IM / 2019MO, TS No.1892-1/3