DBG150G Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier

Ordering number : ENA0700
DBG150G
SANYO Semiconductors
DATA SHEET
DBG150G ^{Diffused Junction Silicon Diode}
15A Single-Phase Bridge Rectifier
Features
• _{Glass passivation for high reliability.}
• _{Plastic molded structure.}
• Peak reverse voltage : VRM=600V.
• Average output current : IO=15A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Dilective Strength Voltage
Tightening Torque
Symbol
VRM
IO
IFSM
Tj
Tstg
Vdis
TOR
Conditions
Tc=124°C, with heatsink
Ta=26°C, without heatsink
50Hz sine 1cycle peak value
Terminals tc case, AC 1 minute
( ): recommended value
Electrical Characteristics at Ta=25°C Per Constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thremal Resistance(Junction-Ambient)
Thremal Resistance(Junction-Case)
Thremal Resistance(Junction-Lead)
Marking: BG150G
Symbol
VF
IR
Rth(j-a)
Rth(j-c)
Rth(j-l)
Conditions
IF=7.5A
VR=600V
Without heatsink
With heatsink
Without heatsink
Ratings
Unit
600
V
15
A
3.6
A
200
A
150
°C
--55 to +150
°C
2.5
kV
0.8(0.5) N•m
Ratings
Unit
min
typ
max
0.9
V
10 µA
25 °C / W
1 °C / W
5 °C / W
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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32207RB TI IM TC-00000583 No. A0700-1/3