DBF20_00 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 2.0A Single-Phase Bridge Rectifier

Ordering number : ENN2817B
DBF20
Diffused Junction Silicon Diode
DBF20
2.0A Single-Phase Bridge Rectifier
Features
Package Dimensions
• _{Glass passivation for high reliability.}
unit : mm
• _{Plastic molded structure.}
1202
• Peak reverse voltage : VRM=200, 600V.
• Average rectified current : IO=2.0A.
[DBF20]
20.0
C2.5
3.5
Electrical Connection
1.0
1.5
1.0
0.5
5.0 5.0 5.0
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Recitified Current
Symbol
VRM
IO
Surge Forward Current
Junction Temperature
Storage Temperature
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Tc=114°C, with a 50!50!1.5mm³ Al fin
Ta=25°C, without fin
50Hz sine wave, 1 cycle
Parameter
Forward Voltage
Reverse Current
Thermal Resistance(Junction-Ambient)
Thermal Resistance(Junction-Case)
Symbol
VF
IR
Rth(j-a)
Rth(j-c)
Conditions
IF=0.75A
VR : At each VRM
without fin
with an Al fin
DBF20C
DBF20G
Unit
200
600
V
¨
2.0
A
¨
1.5
A
¨
60
A
¨
150
°C
¨
--40 to +150
°C
Ratings
min
typ
max
Unit
1.05
V
10
µA
75 °C/W
10 °C/W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 52098 HA (KT) / N118 TA, TS No.2817-1/3