DBF20T Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 2.0A Single-Phase Bridge Rectifier

Ordering number:EN3404A
DBF20T
Silicon Diffused Junction Type
2.0A Single-Phase Bridge Rectifier
Applications
· For primary rectification as switching regulator.
Features
· High reliability attained glass passivation.
· High surge.
· Plastic molded structure.
· Peak reverse voltage:V_RM=200 to 600V.
· Average rectified current:I_O=2.0A.
Package Dimensions
unit:mm
1202
[DBF20T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
Tc=114˚C, with 50×50×1.5mm³ AI fin
Ta=25˚C, without fin
IFSM 50Hz sine wave, 1 cycle
Tj
Tstg
DBF20TC DBF20TE DBF20TG Unit
200
400
600 V
→
→
2.0 A
→
→
1.5 A
→
→
80 A
→
→
150 ˚C
→
→ –40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Electrical Connection
Symbol
Conditions
VF
IR
Rth(j-a)
Rth(j-c)
IF=0.75A
VR:At each VRM
Without fin
With AI fin
Ratings
Unit
min
typ
max
1.05 V
10 µA
50 ˚C/W
10 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N120MH, JK (KOTO) No.3404-1/2