DBF10_09 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 1.0A Single-Phase Bridge Rectifier

Ordering number : ENN2948B
DBF10
DBF10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
Features
• _{Plastic molded structure.}
• Peak reverse voltage : VRM=200, 600V.
• Average rectified current : IO=1.0A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Recitified Current
Symbol
VRM
IO
Surge Forward Current
IFSM
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz sine wave, resistive load,
mounted on a PCB
50Hz sine wave, nonrepetitive,
1 cycle peak value
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Symbol
VF
IR
θjl
θja
Conditions
IF=0.5A
VR : VRM
Junction-lead
Junction-ambient
DBF10C
200
➝
➝
➝
➝
DBF10G
Unit
600
V
1.0
A
30
A
150
°C
--40 to +150
°C
Ratings
Unit
min
typ
max
1.05
V
10
μA
16 °C/W
62 °C/W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004 TS IM TB-00000250 / 41000 GI IM / 52098 HA (KT) / N098 TA, TS No.2948-1/3