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DBD250 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Diffused Junction Silicon Diode 25.0A Single-Phase Bridge Rectifier
Ordering number : ENA1204
DBD250
SANYO Semiconductors
DATA SHEET
DBD250 Diffused Junction Silicon Diode
25.0A Single-Phase Bridge Rectifier
Features
• Plastic molded structure.
• Glass passivation for high reliability.
• Peak reverse voltage : VRM=200V, 600V.
• Average output current : IO=25.0A.
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Dilective Strength Voltage
Symbol
VRM
IO
IFSM
Tj
Tstg
VIS
Conditions
Ta=40°C
Ta=40°C, With 300✕300✕3.0mm3 Cu fin
50Hz sine wave, 1cycle
Terminals tc case, AC 1 minute
Electrical Characteristics at Tc=25°C *Per Constituent element of bridge.
Parameter
Symbol
Forward Voltage
Reverse Current
Thremal Resistance
Note) Maximum tightening torque : 0.98Nm
VF
IR
Rth(j-c)
Conditions
IF=12.5A*
VR=At each VRM*
Junction-Case
DBD250C
DBD250G
Unit
200
600
V
6.0
A
25.0
A
400
A
150
°C
--40 to +150
°C
2
kV
Ratings
Unit
min
typ
max
1.05
V
10 μA
1.5 °C / W
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008RB TI IM TA-0858 No. A1204-1/3