DBB10 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 1.0A Single-Phase Bridge Rectifier

Ordering number:EN1061D
DBB10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Peak reverse voltage:V_RM=100 to 600V.
· Average rectified current:I_O=1.0A.
Package Dimensions
unit:mm
1112
[DBB10]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1cycle
DBB10B DBB10E DBB10G Unit
100
400
600 V
→
→
1.0 A
→
→
30 A
→
→
150 ˚C
→
→ –40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Symbol
Conditions
VF
IF=0.5A
IR
VRM:At each VRM
Ratings
Unit
min
typ
max
1.0 V
10 µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2