DBB08 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 0.8A Single-Phase Bridge Rectifier

Ordering number :EN2772B
DBB08
Diffused Junction Silicon Diode
0.8A Single-Phase Bridge Rectifier
Features
· Plastic molded structure and ultrasmall package
making it easy to make DBB08-applied sets smaller.
· Two type of package available, surface mount type
and insertion type.
· Glass passivation for high reliability.
Package Dimensions
unit:mm
1189 Surface mount type (TM emboss taping)
[DBB08]
Electrical Connection
unit:mm
1247 Substrate inserting type (LT stick)
[DBB08]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Alumina board*
PCB
50Hz sine wave, 1cycle
DBB08C
200
→
→
→
→
→
DBB08G
Unit
600 V
0.8 A
0.5 A
30 A
150 ˚C
–40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Note*:Surface mount type.
Symbol
Conditions
VF
IR
Rth(j-a)
IF=0.4A
VR:At each VRM
Mounted on Cu foil (1mm× 1mm) on alumina board
Mounted on PCB
Ratings
Unit
min
typ
max
1.05 V
10 µA
76 ˚C/W
134 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62096GI (KOTO)/92294MO 8-7589/4218TA, TS 8-2176 No.2772-1/2