DBA60 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 6.0A Single-Phase Bridge Rectifier

Ordering number:EN650C
Diffused Junction Silicon Diode
DBA60
6.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Glass passivation for high reliability.
· Peak reverse voltage:V_RM=100 to 400V.
· Average rectified current :I_O=6.0A.
Package Dimensions
unit:mm
1091
[DBA60]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Ta=40˚C
Ta=40˚C, mounted on
80×80×1.5mm³ AI fin
50Hz sine wave, 1 cycle
DBA60B
–100
→
DBA60C
–200
→
DBA60E
Unit
–400 V
3.5 A
→
→
6.0 A
→
→
200 A
→
→
150 ˚C
→
→ –30 to +150 ˚C
Electrical Characteristics at Ta=25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Note1 : Mounting Torque : 5kg·cm max
Symbol
Conditions
VF
IF=3.0A
IR
VR:At each VRM
Rating
Unit
min typ max
1.05 V
–10 µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098GI/8033KI, TS No.650-1/2