DBA40_00 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 4.0A Single-Phase Bridge Rectifier

Ordering number : ENN649D
DBA40
Diffused Junction Silicon Diode
DBA40
4.0A Single-Phase Bridge Rectifier
Features
• _{Plastic molded structure.}
• Glass passivation for high reliability.
• Peak reverse voltage : VRM=200, 600V.
• Average rectified current : IO=4.0A.
Package Dimensions
unit : mm
1089
[DBA40]
7.0
25.0 min
16.5
10.0
3.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
DBA40C
DBA40G
Unit
VRM
200
IO
Ta=40°C
¨
Ta=40°C, mounted on a 60!60!1.5mm³ Al fin
¨
600
V
2.6
A
4.0
A
IFSM
Tj
50Hz sine wave, 1 cycle
¨
80
A
¨
150
°C
Tstg
¨
--30 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Note : Mounted torque : 0.49N·m max.
Symbol
VF
IR
Conditions
IF=2.0A
VR : At each VRM
Ratings
min
typ
max
Unit
1.05
V
10
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 52098 HA (KT) / 4249 MO / 1285 KI, TS No.649-1/3