DBA250 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 25.0A Single-Phase Bridge Rectifier

Ordering number:EN2145B
DBA250
Silicon Diffused Junction Type
25.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· High reliability attained by glass passivation.
· Peak reverse voltage:V_RM=200, 600V.
· Average rectified current:I_O=25.0A.
Package Dimensions
unit:mm
1162
[DBA250]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Symbol
VRM
IO
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
Insulation Voltage
VIS
Electrical Characteristics at Ta = 25˚C
Conditions
Ta=40˚C
Ta=40˚C, with 300×300×3.0mm³ Cu fin
50Hz sine wave, 1cycle
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Thermal Resistance
VF
IR
Rth(j-c)
Note:Tightening torque : 0.98N·m max.
Note*:Per constituent element of bridge.
IF=12.5A*
VR:At each VRM*
Junction-Case
DBA250C
200
→
→
→
→
→
→
DBA250G
Unit
600 V
6.0 A
25.0 A
400 A
150 ˚C
–40 to +150 ˚C
2 kV
Ratings
Unit
min
typ
max
1.05 V
10 µA
1.5 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82595GI (KOTO) 3089MO, TS No.2145-1/2