DBA20_09 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 2.0A Single-Phase Bridge Rectifier

Ordering number : ENN647D
DBA20
Diffused Junction Type Silicon Diode
DBA20
2.0A Single-Phase Bridge Rectifier
Features
• _{Plastic molded structure.}
• Glass passivation for high reliability.
• Peak reverse voltage : VRM=200, 600V.
• Average rectified current : IO=2.0A.
Package Dimensions
unit : mm
1087
[DBA20]
7.0
20.0 min
12.5
7.5
3.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Ta=40°C
50Hz sine wave, 1cycle
Parameter
Forward Voltage
Reverse Current
Note : Mountiong torque : 0.49N·m max.
Symbol
VF
IR
Conditions
IF=1.0A
VR : At each VRM
DBA20C
DBA20G
Unit
200
600
V
➝
2.0
A
➝
40
A
➝
150
°C
➝
--30 to +150
°C
Ratings
min
typ
max
Unit
1.05
V
10
μA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 52098 HA (KT) / 1129 YT, TS No.647-1/2