DBA100 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 10.0A Single-Phase Bridge Rectifier

Ordering number:EN651D
DBA100
Diffused Junction Silicon Diode
10.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Glass passivation for high reliability.
· Peak reverse voltage:V_RM=200, 600V.
· Average rectified current:I_O=10.0A.
Package Dimensions
unit:mm
1090
[DBA100]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Ta=40˚C
Ta=40˚C, with 200×200×1.5mm³ AI fin
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Note:Mounting torque:0.49N·m max.
Symbol
Conditions
VF
IF=5.0A
IR
VR:At each VRM
DBA100C
200
→
→
→
→
→
DBA100G
Unit
600 V
3.7 A
10.0 A
200 A
150 ˚C
–30 to +150 ˚C
Ratings
Unit
min
typ max
1.05 V
10 µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71096GI (KOTO)/N098TA, TS No.651-1/2