DBA10 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 1.0A Single-Phase Bridge Rectifier

Ordering number:EN646D
DBA10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Peak reverse voltage:V_RM=100 to 600V
· Average rectified current:I_O=1.0A.
Package Dimensions
unit:mm
1093
[DBA10]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Ta=60˚C
50Hz sine wave, 1cycle
DBA10B DBA10C DBA10E DBA10G Unit
100
200
400
600 V
→
→
→
1.0 A
→
→
→
50 A
→
→
→
150 ˚C
→
→
→ –40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Forward Voltage
Reverse Current
Symbol
Conditions
VF
IF=0.5A
IR
VRM:At each VRM
Ratings
Unit
min
typ
max
1.05 V
10 µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/D288MO/4124KI, TS No.646-1/2