CPH6619 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

Ordering number : ENA0473
CPH6619
SANYO Semiconductors
DATA SHEET
CPH6619
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET
for driving P-channel MOSFET enables high-density mounting.
• Excellent ON-resistance characterristic.
• Best suited for load switches.
• N-channel 1.5V drive, P-channel 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm) 1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
Unit
30
--12
V
±10
±8
V
0.4
--2
A
1.6
--8
A
0.8
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
30
V
1 µA
±10 µA
0.4
1.3
V
0.13
0.22
S
2.9
3.7
Ω
3.7
5.2
Ω
6.4
12.8
Ω
7
pF
5.9
pF
2.3
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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