English
Language : 

CPH6614 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
Ordering number : ENN8068
CPH6614
CPH6614
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• The CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
Ultrahigh-speed switching, thereby enabling high-density mounting.
• Excellent ON-resistance characteristic.
• Best suited for load switches.
• 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=0.5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
Unit
30
--30
V
±20
±20
V
1.8
--1.2
A
7.2
--4.8
A
0.8
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
30
V
1 µA
±10 µA
1.2
2.6
V
0.78
1.3
S
150
195 mΩ
290
410 mΩ
95
pF
22
pF
16
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1004PE TS TB-00000656 No.8068-1/6