CPH6605 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs

Ordering number : ENN7183
CPH6605
N-Channel and P-Channel Silicon MOSFETs
CPH6605
Load Switching Applications
Features
Package Dimensions
• _{Dual chip device for high-density mounting.}
unit : mm
One of the encapsulated devices is a P-channel MOSFET 2202
featuring low ON-resistance and high-speed switching.
The other is an N-channel small signal MOSFET used
for driving the P-channel MOSFET.
• _{Optimal for load switch use.}
2.9
6 54
[CPH6605]
0.15
• _{Excellent ON-resistance characteristic.}
0.05
• _{2.5V drive.}
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel
P-channel
Unit
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm)1unit
30
±10
0.65
2.6
0.8
150
--20
V
±10
V
--1.5
A
--6.0
A
W
°C
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FQ
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
Ratings
Unit
min
typ
max
30
V
10
µA
±10 µA
0.4
1.3
V
400
560
mS
0.9
1.2
Ω
1.2
1.7
Ω
2.6
5.2
Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-10G0I11IM8 No.7183-1/6