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CPH6519 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier, Driver Applications
Ordering number : ENN7399
CPH6519
NPN Epitaxial Planar Silicon Composite Transistors
CPH6519
Low-Frequency General-Purpose
Amplifier, Driver Applications
Features
• Composite type with 2 transistors contained in the
CPH package currently in use, improving the mount-
ing efficiency greatly.
• The CPH6519 is formed with two chips, being
equivalent to the 2SC3689, placed in one package.
• Adoption of FBET process.
• High DC current gain (hFE=800 to 3200).
• High VEBO (VEBO≥15V).
• Excellent in thermal equilibrium and pair capability.
Specifications
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm
2212
[CPH6519]
2.9
0.15
6 54
0.05
12 3
0.95
0.4
1 : Base 1
2 : Emitter 1
3 : Collector 2
4 : Emitter 2
5 : Base 2
6 : Collector 1
SANYO : CPH6
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
1unit
Electrical Characteristics at Ta=25°C
Conditions
Ratings
Unit
60
V
50
V
15
V
100
mA
200
mA
20
mA
350 mW
500 mW
150
°C
--55 to +150
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Marking : 3F
Symbol
Conditions
ICBO
IEBO
hFE
hFE(small/
large)
VCB=40V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
Ratings
Unit
min
typ
max
0.1
µA
0.1
µA
800
1500
3200
0.8
0.98
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22503 TS IM TA-100338 No.7399-1/4