CPH6341 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1084
CPH6341
SANYO Semiconductors
DATA SHEET
CPH6341
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance.}
• _{High-speed switching.}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²âœ•0.8mm)
Ratings
Unit
--30
V
±20
V
--5
A
--20
A
1.6
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : YT
V(BR)DSS
IDSS
IGSS
VGS(off)
⏐^yfs⏐
RDS(on)1
RDS(on)2
RDS(on)3
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
ID=--3A, VGS=--10V
ID=--1.5A, VGS=--4.5V
ID=--1.5A, VGS=--4V
min
--30
--1.2
2.8
Ratings
Unit
typ
max
V
--1 μA
±10 μA
--2.6
V
4.8
S
45
59 mΩ
71
100 mΩ
82
115 mΩ
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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30508PE TI IM TC-00001220 No. A1084-1/4