CPH6003A Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-frequency Medium-power Amplifier Applications

Ordering number : ENA1078
CPH6003A
SANYO Semiconductors
DATA SHEET
CPH6003A
NPN Epitaxial Planar Silicon Transistor
High-frequency Medium-power Amplifier
Applications
Features
• _{High gain (fT=7GHz typ).}
• _{High Current : (IC=150mA).}
• _{Ultraminiature and thin 6pin package.}
• _{Large Collector Disspation (800mW).}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²âœ•0.8mm)
Ratings
Unit
20
V
12
V
2
V
150 mA
800 mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Marking : GC
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=50mA
min
100
Ratings
Unit
typ
max
1.0
μA
10
μA
180
7
GHz
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
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D2408AB MS IM TC-00001809 No. A1078-1/5