CPH6001A Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

Ordering number : ENA1079
CPH6001A
SANYO Semiconductors
DATA SHEET
CPH6001A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
Features
• _{High gain : ⏐S21e⏐}²_{=11dB typ (f=1GHz).}
• _{High cutoff frequency : fT=6.7GHz typ.}
• _{Small and slim 6-pin package.}
• _{Large allowable collector dissipation (800mW max).}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²âœ•0.8mm)
Ratings
Unit
20
V
12
V
2
V
100 mA
800 mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Marking : GA
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=30mA
VCE=5V, IC=70mA
VCE=5V, IC=30mA
min
90
70
5
Ratings
typ
Unit
max
1.0
μA
10
μA
180
6.7
GHz
Continued on next page.
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O2109AB TK IM TC-00002102 No. A1079-1/6