CPH3360_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA0114A
CPH3360
SANYO Semiconductors
DATA SHEET
CPH3360
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=233mΩ(typ.)}
• _{4V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--30
V
±20
V
--1.6
A
--6.4
A
0.9
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
CPH3360-TL-H
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1
0.95
2
0.4
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
61312 TKIM/N2011PE TKIM TC-00002659 No. A0114-1/7