CPH3351 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1880
CPH3351
SANYO Semiconductors
DATA SHEET
CPH3351
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=190mΩ(typ.)}
• _{4V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--60
V
±20
V
--1.8
A
--7.2
A
1
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
0.15
3
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-96, SC-95, SOT-346, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
D0810PE TKIM TC-00002526 No. A1880-1/4