BMS3004_12 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1908A
BMS3004
SANYO Semiconductors
DATA SHEET
BMS3004
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=6.5mΩ (typ.)}
• _{Input capacitance Ciss=13400pF (typ.)}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--48V, L=100μH, IAV=--54A (Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--75
V
±20
V
--68
A
--272
A
2.0
W
40
W
150
°C
--55 to +150
°C
380 mJ
--54
A
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
A
1.47 MAX
0.8
2.76
DETAIL-A
(0.84)
MS3004
1
LOT No.
3
123
0.5
2.54
2.54
FRAME
EMC
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
http://semicon.sanyo.com/en/network
41112QA TKIM TC-00002740/10511QA TKIM TC-00002547 No. A1908-1/5