BMS3003 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1907
BMS3003
SANYO Semiconductors
DATA SHEET
BMS3003
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=5.0mΩ (typ.)}
• _{Input capacitance Ciss=13200pF (typ.)}
• _{4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7525-002
10.0
3.2
4.5
2.8
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--78
A
--312
A
2.0
W
40
W
150
°C
--55 to +150
°C
420 mJ
--60
A
Product & Package Information
• Package
: TO-220ML(LS)
• JEITA, JEDEC
: SC-67, SOT-186A
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
1.6
1.2
0.75
123
2.55
2.55
MS3003
LOT No.
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML(LS)
1
3
http://semicon.sanyo.com/en/network
D2210QA TKIM TC-00002546 No. A1907-1/5