BFL4026 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1797
BFL4026
SANYO Semiconductors
DATA SHEET
BFL4026
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)=2.8Ω (typ.)}
• _{Input capacitance Ciss=650pF (typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
Drain Current (Pulse)
IDc*1
IDpack*2
IDP
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
5
A
3.5
A
10
A
Allowable Power Dissipation
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0
W
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
140 mJ
Avalanche Current *5
IAV
5
A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=10mH, IAV=5A (Fig.1)
*5 L≤10mH, single pulse
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
0.9
1.2
0.75
123
2.55
2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4026
LOT No.
1
3
http://semicon.sanyo.com/en/network
70710QB TK IM TC-00002399 No. A1797-1/5